Industry Insight
Global FRAM Market 2020 is ready to step up again with gaining
high valuation by the year 2025, after coronavirus disease outbreak that posed
as most challenging to the goals formed by the Global FRAM Market in the
recent. On this Market Research Future conducted a comprehensive study and
highlighted that the market would maintain its growth graph with 3.78% CAGR,
and would be valued USD 343.2 Million during the years 2016–2025 (forecast
period). Before the pandemic, the market recorded a valuation of USD 265.4
Million, which was in the year 2018.
The demand for FRAM (ferroelectric random-access memory) is
rapidly escalating in many applications that require low power, high
performance, and high endurance. As FRAM is considered a better alternative to
electrically erasable programmable read-only memory (EEPROM) for data-logging
applications and low-power, it is essential as it prevents any data loss, even
in the event of a sudden power shutdown.
Top Market Players
The top market players of the global FRAM market are listed as
Rohm Co., Ltd (Japan), Fujitsu Ltd (Japan), Cypress Semiconductor Corp (US),
Texas Instruments (US), and more.
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Growing demand for FRAM in automotive applications has also
been an essential factor influencing the global FRAM market's growth journey.
In fact, the availability of substitutes is also anticipated to challenge
market growth during the assessment period. Further, the emergence of new FRAM
designs using the CMOS process is likely to act as a prospect for the global
FRAM market during the forecast period, especially post lockdown for the
COVID-19 outbreak.
Some renowned companies such as Cypress Semiconductor
Corporation announced a new family of serial nonvolatile memories as ExcelonTM
Ferroelectric Random-Access Memory. It features high-speed, nonvolatile data
logging that prevents data loss even in harsh automotive and industrial environments,
as well as extreme temperatures. In the same line, Fujitsu also announced the
release of the 8Mbit ReRAM MB85AS8MT. It has the world's most significant
density as a mass-produced ReRAM product. It is optimal for battery-operated
small wearable devices such as hearing aids, Smartwatches, and smart bands.
Segmentation of Market
The global Global
Ferroelectric RAM Market has further been segmented along the following
lines:
Depending on product type, the market has included 4K, 16K,
6.18K, 32K, 64K, 128K, 256K, 512K, and more (1M, 2M,4M). Among these, the 256K
segment acquired for the second-largest share. The 4K type is a FRAM that is
manufactured by using the ferroelectric process and silicon gate complementary
metal-oxide-semiconductor (CMOS) process technologies for forming the
nonvolatile memory cells. The 8K FRAM is a built-in nonvolatile memory with a
fast write feature and low power consumption. The 16K type is a FRAM that is
manufactured using the ferroelectric process and silicon gate CMOS process
technologies for forming the nonvolatile memory cells. The 128K is a FRAM chip
that is manufactured using the ferroelectric process and silicon gate CMOS process
technologies for forming the nonvolatile memory cells.
In terms of interface segment, the market has included serial
and parallel.
In terms of the application segment, the market has included
enterprise storage, metering/measurement, factory automation, automotive,
medical, telecommunication, and more.
Regional Front
North America, Asia-Pacific, Europe, and the Middle East and
Africa and Central & South America are the regions involved in the study of
the global FRAM market.
Asia-Pacific is anticipated to lead the FRAM Market Demand during the assessment period.
China has been a significant country for the supply of FRAM modules in terms of
manufacturing that are used in consumer electronic devices. Back in 2018,
Asia-Pacific also leads the global market by value USD 114.5 million. It is now
expected to record a CAGR of 3.11% during the foretell period.
Further, the market in North America also posed to be the
fastest-growing at the highest CAGR during the review period.
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